Experiment results under 808 nm laser power beaming show that high optical to electrical conversion efficiency of 53 23 at 5 w cm 2 is achieved using the optimized gaas pv laser converter.
High voltage gaas photovoltaic laser power converters.
The main drawback of photovoltaic pv laser power converters based on gaas material is the low output voltage which is often insufficient to power electronic circuits directly.
The operating voltage at the maximum power point is 5 5 6 0 v depending on the incident laser power and an output electrical power output of 1 3 w can be extracted at a laser power of 2 9 w.
Aside from the use of a dc dc converter in combination with a single pv converter it is possible to boost the voltage by the monolithic serial interconnection of.
The main drawback of photovoltaic pv laser power converters based on gaas material is the low output voltage which is often insufficient to power electronic circuits directly.
The ideality factor reverse saturation current series resistance and shunt resistance is introduced.
The lpc chips are characterized by measuring current voltage i v characteristics under 808 nm laser illumination and a maximum conversion efficiency η c.
Six junction vertically stacked gaas laser power converters lpcs with n gaas p al 0 37 ga 0 63 as tunnel junctions have been designed and grown by metal organic chemical vapor deposition for converting the power of 808 nm lasers.
Finally accurate extraction of the key parameters viz.
Aside from the use of a dc dc converter in combination with a single pv converter it is possible to boost the voltage by the monolithic serial interconnection of several converter segments on a single chip.
In this paper we report the development of gaas pv power converters with improved conversion efficiency at high power densities.